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| FDFMA2P853T Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode December 2008 FDFMA2P853T Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode -20 V, -3.0 A, 120 m Features MOSFET: Max rDS(on) = 120 m at VGS = -4.5 V, ID = -3.0 A Max rDS(on) = 160 m at VGS = -2.5 V, ID = -2.5 A Max rDS(on) = 240 m at VGS = -1.8 V, ID = -1.0 A tm General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The MicroFET 2x2 Thin package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications. Schottky: VF < 0.46 V @ 500 mA Low profile - 0.55 mm maximum - in the new package MicroFET 2x2 Thin RoHS Compliant Free from halogenated compounds and antimony oxides Pin 1 A NC D A1 NC 2 D3 6C 5G 4S MicroFET 2X2 Thin Symbol VDS VGS ID PD TJ, TSTG VRRM IO C G S Ratings -20 8 (Note 1a) (Note 1a) (Note 1b) -3.0 -6 1.4 0.7 -55 to +150 30 1 Units V V A W C V A MOSFET Maximum Ratings TA = 25 C unless otherwise noted Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation TA = 25 C TA = 25 C TA = 25 C Operating and Storage Junction Temperature Range Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current Thermal Characteristics RJA RJA RJA RJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) 86 173 86 140 C/W Package Marking and Ordering Information Device Marking 53 Device FDFMA2P853T Package MicroFET 2x2 Thin 1 Reel Size 7 '' Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com (c)2008 Fairchild Semiconductor Corporation FDFMA2P853T Rev.B1 FDFMA2P853T Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Electrical Characteristics TJ = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250 A, VGS = 0 V ID = -250 A, referenced to 25 C VDS = -16 V, VGS = 0 V VGS = 8 V, VDS = 0 V -20 -12 -1 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = -250 A ID = -250 A, referenced to 25 C VGS = -4.5 V, ID = -3.0 A VGS = -2.5 V, ID = -2.5 A rDS(on) Static Drain to Source On Resistance VGS = -1.8 V, ID = -1.0 A VGS = -4.5 V, ID = -3.0 A TJ = 125 C gFS Forward Transconductance VDS = -5 V, ID = -3.0 A -0.4 -0.7 2 90 120 172 118 7 120 160 240 160 S m -1.3 V mV/C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1.0 MHz 435 80 45 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VDD= -10 V, ID = -3.0 A VGS = -4.5 V VDD = -10 V, ID = -1.0 A VGS = -4.5 V, RGEN = 6 9 11 15 6 4 0.8 0.9 18 19 27 12 6 ns ns ns ns nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage VGS = 0 V, IS = -1.1 A Reverse Recovery Time Reverse Recovery Charge (Note 2) -0.8 17 6 -1.1 -1.2 A V ns nC IF = -3.0 A, di/dt = 100 A/s Schottky Diode Characteristics IR Reverse Leakage VR = 5 V TJ = 25 C TJ = 125 C TJ = 25 C IR Reverse Leakage VR = 20 V TJ = 85 C TJ = 125 C VF VF Forward Voltage Forward Voltage IF = 500 mA IF = 1 A TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C 9.9 2.3 9.9 0.3 2.3 0.4 0.3 0.5 0.49 50 10 100 1 10 0.46 0.35 0.55 0.54 A mA A mA mA V V V V FDFMA2P853T Rev.B1 2 www.fairchildsemi.com FDFMA2P853T Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Electrical Characteristics TA = 25 C unless otherwise noted Notes: 1: RJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design. (a) MOSFET RJA = 86 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. (b) MOSFET RJA = 173 oC/W when mounted on a minimum pad of 2 oz copper. (c) Schottky RJA = 86 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. (d) Schottky RJA = 140 oC/W when mounted on a minimum pad of 2 oz copper. a)86 oC/W when mounted on a 1 in2 pad of 2 oz copper. b)173 oC/W when mounted on a minimum pad of 2 oz copper. c)86 oC/W when mounted on a 1 in2 pad of 2 oz copper. d)140 oC/W when mounted on a minimum pad of 2 oz copper. 2: Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. FDFMA2P853T Rev.B1 3 www.fairchildsemi.com FDFMA2P853T Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25 C unless otherwise noted 6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3.0 VGS = -4.5 V -ID, DRAIN CURRENT (A) 5 VGS = -2 V 2.5 2.0 1.5 1.0 PULSE DURATION = 300 s DUTY CYCLE = 2%MAX VGS = -1.5 V VGS = -1.8 V VGS = -2 V 4 3 2 1 0 0 0.5 VGS = -3.5 V VGS = -3 V VGS = -2.5 V VGS = -1.8 V VGS = -2.5 V PULSE DURATION = 300 s DUTY CYCLE = 2% MAX VGS = -1.5 V VGS = -3 V VGS = -3.5 V VGS = -4.5 V 1.0 1.5 2.0 2.5 0.5 0 1 2 3 4 5 6 -ID, DRAIN CURRENT (A) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 0.28 SOURCE ON-RESISTANCE () 1.4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.3 1.2 1.1 1.0 0.9 0.8 -50 ID = -3.0 A VGS = -4.5 V 0.24 0.20 0.16 PULSE DURATION = 300 s DUTY CYCLE = 2% MAX rDS(on), DRAIN TO ID = -1.5 A TJ = 125 oC 0.12 0.08 TJ = 25 oC -25 0 25 50 75 100 125 150 0.04 0 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature 6 -IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 10 -ID, DRAIN CURRENT (A) 5 4 3 2 PULSE DURATION = 300 s DUTY CYCLE = 2% MAX VGS = 0 V 1 TJ = 125 oC VDS = -5 V 0.1 0.01 0.001 TJ = 25 oC TJ = 125 oC TJ = 25 oC TJ = -55 oC 1 0 0 0.5 1.0 1.5 2.0 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) TJ = -55 oC 0.0001 0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDFMA2P853T Rev.B1 4 www.fairchildsemi.com FDFMA2P853T Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25 C unless otherwise noted 5 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -3.0 A 700 600 CAPACITANCE (pF) 4 VDD = -5 V 500 400 300 200 Ciss 3 VDD = -10 V 2 VDD = -15 V 1 100 Coss Crss f = 1 MHz VGS = 0 V 0 0 1 2 3 4 5 Qg, GATE CHARGE (nC) 0 0 4 8 12 16 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 10 10 100 us IF, FORWARD CURRENT (A) -ID, DRAIN CURRENT (A) 1 ms 1 TJ = 125 oC 1 10 ms THIS AREA IS LIMITED BY rDS(on) 0.1 TJ = 25 oC 100 ms 1s 10 s DC 0.1 SINGLE PULSE TJ = MAX RATED RJA = 173 oC/W TA = 25 oC 0.01 0.01 0.1 1 10 50 0.001 0 0.2 0.4 0.6 0.8 VF, FORWARD VOLTAGE (V) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area 10 Figure 10. Schottky Diode Foward Voltage IR, REVERSE LEAKAGE CURRENT (mA) 200 P(PK), PEAK TRANSIENT POWER (W) 100 VGS = -10 V SINGLE PULSE RJA = 173 oC/W TA = 25 oC 1 TJ = 125 oC 0.1 TJ = 85 oC 10 0.01 TJ = 25 oC 1 0.5 -4 10 10 -3 0.001 0 4 8 12 16 20 VR, REVERSE VOLTAGE (V) 10 -2 10 -1 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Schottky Diode Reverse Current Figure 12. Single Pulse Maximum Power Dissipation FDFMA2P853T Rev.B1 5 www.fairchildsemi.com FDFMA2P853T Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25 C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE RJA = 173 C/W o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 0.01 -4 10 10 -3 10 -2 10 -1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction to Ambient Transient Thermal Response Curve FDFMA2P853T Rev.B1 6 www.fairchildsemi.com FDFMA2P853T Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Dimensional Outline and Pad Layout FDFMA2P853T Rev.B1 7 www.fairchildsemi.com FDFMA2P853T Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) tm Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM tm PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TM TinyPowerTM Saving our world, 1mW /W /kW at a timeTM TinyPWMTM SmartMaxTM TinyWireTM SMART STARTTM SerDesTM SPM(R) STEALTHTM SuperFETTM UHC(R) SuperSOTTM-3 Ultra FRFETTM SuperSOTTM-6 UniFETTM SuperSOTTM-8 VCXTM SupreMOSTM VisualMaxTM SyncFETTM XSTM (R) The Power Franchise(R) * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDFMA2P853T Rev.B1 Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 www.fairchildsemi.com |
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